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Enhancing the light emission of AlGaAs-based LEDs through single gold nanoparticlesGÖHLER, Tino; HILLE, Andreas; GRAFSTRÖM, Stefan et al.Journal of the Optical Society of America. B, Optical physics (Print). 2011, Vol 28, Num 4, pp 851-855, issn 0740-3224, 5 p.Article

Improved heterointerface and vertical transport in GaAs single quantum well confined by all-binary GaAs/AlAs short-period-superlatticesFUJIWARA, K; DE MIGUEL, J. L; PLOOG, K et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L405-L407, issn 0021-4922Article

Characterization of GaAs-AlAs superlattices by laser-Raman spectroscopyKUBOTA, K; NAKAYAMA, M; KATOH, H et al.Solid state communications. 1984, Vol 49, Num 2, pp 157-159, issn 0038-1098Article

Index of refraction of AlAs-GaAs superlatticesLEBURTON, J. P; HESS, K; HOLONYAK, N. JR et al.Journal of applied physics. 1983, Vol 54, Num 7, pp 4230-4231, issn 0021-8979Article

Femtosecond tuning of Cr:colquiriite lasers with AlGaAs-based saturable Bragg reflectorsDEMIRBAS, Umit; PETRICH, Gale S; DUO LI et al.Journal of the Optical Society of America. B, Optical physics (Print). 2011, Vol 28, Num 5, pp 986-993, issn 0740-3224, 8 p.Article

Pulsed- and continuous-wave difference-frequency generation in AlGaAs Bragg reflection waveguidesHAN, J. B; KANG, D. P; ABOLGHASEM, P et al.Journal of the Optical Society of America. B, Optical physics (Print). 2010, Vol 27, Num 12, pp 2488-2494, issn 0740-3224, 7 p.Article

Difference-frequency generation in AlGaAs Bragg reflection waveguidesHAN, Jun-Bo; ABOLGHASEM, Payam; DONGPENG KANG et al.Optics letters. 2010, Vol 35, Num 14, pp 2334-2336, issn 0146-9592, 3 p.Article

Photocollection efficiency of GaAs/AlAs/GaAs p+-i-n and n+-i-p photodiodesMELLOCH, M. R; MCMAHON, C. P; LUNDSTROM, M. S et al.Solar cells. 1987, Vol 21, pp 233-240, issn 0379-6787Conference Paper

Raman scattering characterization of interface broadening in GaAs/AlAs short period superlattices grown by molecular beam epitaxyJUSSERAND, B; ALEXANDRE, F; PAQUET, D et al.Applied physics letters. 1985, Vol 47, Num 3, pp 301-303, issn 0003-6951Article

Leakage-induced and disorder-activated modes from the folded acoustic branches in GaAs-AlAs superlatticesSAPRIEL, J; CHAVIGNON, J; ALEXANDRE, F et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 10, pp 7118-7122, issn 0163-1829Article

Thermal stability of a short period AlAs/n-GaAs superlatticeIWATA, N; MATSUMOTO, Y; BABA, T et al.Japanese journal of applied physics. 1985, Vol 24, Num 1, pp L17-L20, issn 0021-4922Article

Valence-band discontinuities at AlAs-based heterojunction interfacesKELLY, M. K; NILES, D. W; COLAVITA, E et al.Applied physics letters. 1985, Vol 46, Num 8, pp 768-770, issn 0003-6951Article

Elimination of persistent photo-conductivity and improvement in Si activation coefficient by Al spatial separation from Ga and Si in Al-Ga-As Si solid system. A novel short period AlAs/n-GaAs superlatticeBABA, T; MIZUTANI, T; OGAWA, M et al.Japanese journal of applied physics. 1983, Vol 22, Num 10, pp L627-L629, issn 0021-4922Article

Raman scattering from GaAs-AlAs monolayer-controlled superlatticesNAKAYAMA, M; KATO, H; CHIKA, s et al.Solid state communications. 1985, Vol 53, Num 5, pp 493-495, issn 0038-1098Article

Optical investigations of electron transport through GaAs/AlAs heterostructuresSCHLESINGER, T. E; COLLINS, R. T; MCGILL, T. C et al.Journal of applied physics. 1985, Vol 58, Num 2, pp 852-856, issn 0021-8979Article

Photoacoustic spectroscopy of semiconductor heterostructures by piezoelectric transducersKUBOTA, K; MURAI, H; NAKATSU, H et al.Journal of applied physics. 1984, Vol 55, Num 6, pp 1520-1524, issn 0021-8979Article

GaAs/A1As superlattices for detection of terahertz radiationWINNERL, S.Microelectronics journal. 2000, Vol 31, Num 6, pp 389-396, issn 0959-8324Article

Optical transitions in GaAs/AlAs superlattices with different miniband widthsFUJIWARA, K; KAWASHIMA, K; YAMAMOTO, T et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 889-892, issn 0038-1101Conference Paper

Temperature dependence of the dielectric function and interband critical points of AlAs obtained on an MBE grown layerGARRIGA, M; KELLY, M; PLOOG, K et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 122-125, issn 0040-6090Conference Paper

Rectification in heavily doped p-type GaAs/AlAs heterojunctionsYOFFE, G. W.Journal of applied physics. 1991, Vol 70, Num 2, pp 1081-1083, issn 0021-8979Article

Raman scattering from (A1As)m (GaAs)n ultrathin-layer superlatticesISHIBASHI, A; ITABASHI, M; MORI, Y et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2887-2889, issn 0163-1829Article

Observation of enhanced spontaneous decay in 1μm aperture microcavities with InGaAlAs quantum dot active regionsGRAHAM, L. A; DENG, Q; CSUTAK, S. M et al.SPIE proceedings series. 1999, pp 288-292, isbn 0-8194-3095-1Conference Paper

Diffusion induced disorder in AlAs-GaAs superlattice by transition elementsHO, H. P; HARRISON, I; BABAALI, N et al.Journal of electronic materials. 1991, Vol 20, Num 9, pp 649-652, issn 0361-5235Article

MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlatticesFULIN XIONG; TOMBRELLO, T. A; SCHWARTZ, C. L et al.Applied physics letters. 1990, Vol 57, Num 9, pp 896-898, issn 0003-6951Article

Photoluminescence of GaAs single quantum wells confined by short-period all-binary GaAs/AlAs superlatticesFUJIWARA, K; PLOOG, K.Applied physics letters. 1984, Vol 45, Num 11, pp 1222-1224, issn 0003-6951Article

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